| PART |
Description |
Maker |
| T1G6003028-FS T1G6003028-FSEVB1 T1G6003028-FS-15 |
30W, 28V, DC ?6 GHz, GaN RF Power Transistor
30W, 28V, DC 6 GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
| CGH27015F CGH27015F-TB CGH27015F-AMP |
15 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz
|
Cree, Inc
|
| ECE-V1HA101UP EEV-TG2A101M ERJ-8GEYJ100V GRM32NR72 |
30W GaN WIDEBAND POWER AMPLIFIER
|
RF Micro Devices
|
| MRF137 |
The RF MOSFET Line 30W, to 400MHz, 28V
|
M/A-COM Technology Solutions, Inc.
|
| CGH27015F |
15 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX
|
CREE[Cree, Inc]
|
| MRF314 MRF314-15 |
The RF Line NPN Silicon Power Transistor 30W, 30-200MHz, 28V
|
M/A-COM Technology Solu...
M/A-COM Technology Solutions, Inc.
|
| MGFS45B2527B |
2.5-2.7 GHz BAND / 30W
|
Mitsubishi Electric Semiconductor
|
| MGFS45V2527A MGFS45V2527A11 |
2.7-3.5 GHz BAND / 30W
|
Mitsubishi Electric Semiconductor
|
| R417306130 |
N ATTENUATOR 6 DB 4 GHZ 30W
|
List of Unclassifed Man...
|
| TGA2623-CP TGA2623-CP-15 |
10 to 11 GHz 32 W GaN Power Amplifier
|
TriQuint Semiconductor
|
| CG2H40045 CG2H40045F CG2H40045P |
45 W, DC - 4 GHz RF Power GaN HEMT
|
Cree, Inc
|
| T1G6001528-Q3 T1G6001528-Q3-15 T1G6001528-Q3-EVB1 |
DC ?6 GHz 18 W GaN RF Power Transistor
DC 6 GHz 18 W GaN RF Power Transistor
|
TriQuint Semiconductor
|
